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APT64GA90B2D30
Microchip Technology
Trans IGBT Chip N-CH 900V 117A 500000mW 3-Pin(3+Tab) TO-247 Tube
Fiche technique ACCESSOIRES Notify Me
RoHS Compliant
TUBE Emballage
Description
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Trans IGBT Chip N-CH 900V 117A 500000mW 3-Pin(3+Tab) TO-247 Tube
Search Keywords: APT64GA90B2D30
spécification
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Product AttributeAttribute Value Select Attribute
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fournisseur:Microchip Technology
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Référence:APT64GA90B2D30
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Unité de mesure:Per Each
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RoHS:Yes
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HTS:8541290095
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ECCN:EAR99
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Référence:
1 -
Dimension:16.266976mm(Max) x 5.31(Max) x 21.46(Max)mm
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Family:APT64GA90B2D30
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Maximum Gate Emitter Voltage:±30 V
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Configuration:Single6975
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Maximum Gate Emitter Leakage Current:0.1 uA
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Maximum Collector-Emitter Voltage:900 V
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Channel Type:N6974
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Maximum Continuous Collector Current:117 A
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Maximum Power Dissipation:500000 mW
Tools/3D Models
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Commande min Quantitè:
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20 Weeks
Peut expédier
22/9/26
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