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NCD57001FDWR2G
onsemi
Isolated High Current SiC/MOSFET/IGBT Gate Driver Isolated high current and high efficiency IGBT gate driver with internal gal ...
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Beschreibung
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Isolated High Current SiC/MOSFET/IGBT Gate Driver Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation
Search Keywords: NCD57001FDWR2G
Spezifizierung
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Product AttributeAttribute Value Select Attribute
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Lieferant:onsemi
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Artikelnummer:NCD57001FDWR2G
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Maßeinheit:Per Each
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RoHS (Beschränkung gefährlicher Stoffe):Yes
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HTS:8542390070
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COO:US
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ECCN:EAR99
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Standardmenge:
1000
Ressourcen
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Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
Vorrätig: 0
MOQ für Out-of-Stock-Menge:
250
21 Weeks
Kan verzenden
11/11/26
PRICE (EUR)
MENGE
Stückpreis
250
€4.42
500
€2.72
750
€2.15
1 000 +
€2.11
Click for Quote
Anmeldung
um Sonderpreise freizuschalten