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Image is representational - see mfr. specs
MJD112-1G
onsemi
The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications.
Datenblatt Zubehör Notify Me
Nicht RoHS-konform
Certificate of Compliance Guarantee
Beschreibung
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The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications.
Search Keywords: MJD1121G
Spezifizierung
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Product AttributeAttribute Value Select Attribute
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Lieferant:onsemi
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Artikelnummer:MJD112-1G
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Maßeinheit:Per Each
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RoHS (Beschränkung gefährlicher Stoffe):No
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HTS:8541290095
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COO:MY
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ECCN:EAR99
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Standardmenge:
75 -
Dimension:6.73(Max) x 2.38(Max) x 6.35(Max) mm
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Family:MJD112
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Maximum Collector Emitter Voltage:100 V
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Maximum Base Emitter Saturation Voltage:4@40mA@4A V
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Maximum Collector Base Voltage:100 V
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Maximum Collector Emitter Saturation Voltage:2@8mA@2A,3@40mA@4A V
Tools/3D Models
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Ressourcen
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Vorrätig:
43,200
Versand heute, if you order in
Minimum Order Quantity:
75
Mehrere:
75
29 Weeks
Kan verzenden
21/12/26
PRICE (EUR)
MENGE
Stückpreis
75
€0.3429
300
€0.3356
1 050
€0.3267
2 550
€0.3188
5 025
€0.3170
7 500
€0.3161
10 050
€0.3134
15 000 +
€0.3126
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