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Image is representational - see mfr. specs
APTGT50DDA120T3G
Microchip Technology
Trans IGBT Module N-CH 1200V 75A 270000mW 32-Pin Case SP-3 Tube
产品说明书 附件 Notify Me
符合 RoHS 规定
TUBE 包装
描述
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Trans IGBT Module N-CH 1200V 75A 270000mW 32-Pin Case SP-3 Tube
Search Keywords: APTGT50DDA120T3G
规格
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Product AttributeAttribute Value Select Attribute
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供应商:Microchip Technology
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部件编号:APTGT50DDA120T3G
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计量单位:Per Each
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RoHS:Yes
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HTS:8541590080
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ECCN:EAR99
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供应商标准包装:
1 -
Family:APTGT50DDA120T3G
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Maximum Power Dissipation:270000 mW
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Dimension:73.4 x 40.8 x 11.56996mmmm
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Maximum Continuous Collector Current:75 A
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Maximum Gate Emitter Voltage:±20 V
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Configuration:Dual6995
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Channel Type:N6994
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Maximum Collector-Emitter Voltage:1200 V
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Maximum Gate Emitter Leakage Current:0.4 uA
Tools/3D Models
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有存货: 0
缺货数量的起订量:
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26 Weeks
可以发货
11/16/26