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APT15GN120BDQ1G
Microchip Technology
Trans IGBT Chip N-CH 1200V 45A 195000mW 3-Pin(3+Tab) TO-247 Tube
产品说明书 附件 Notify Me
符合 RoHS 规定
TUBE 包装
描述
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Trans IGBT Chip N-CH 1200V 45A 195000mW 3-Pin(3+Tab) TO-247 Tube
Search Keywords: APT15GN120BDQ1G
规格
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Product AttributeAttribute Value Select Attribute
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供应商:Microchip Technology
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部件编号:APT15GN120BDQ1G
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计量单位:Per Each
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RoHS:Yes
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HTS:8541290095
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ECCN:EAR99
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供应商标准包装:
1 -
Maximum Gate Emitter Leakage Current:0.12 uA
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Maximum Collector-Emitter Voltage:1200 V
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Family:APT15GN120BDQ1
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Maximum Gate Emitter Voltage:±30 V
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Maximum Power Dissipation:195000 mW
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Dimension:16.266976mm(Max) x 5.31(Max) x 21.46(Max)mm
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Configuration:Single6975
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Channel Type:N6974
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Maximum Continuous Collector Current:45 A
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Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
有存货: 0
Minimum Order Quantity:
5
26 Weeks
可以发货
11/16/26
PRICE (USD)
数量
Unit Price
5
$6.67
25
$6.12
50
$6.11
100
$5.88
250
$5.52
500
$5.50
1,000
$5.49
2,500 +
$5.39
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