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IRFR220 by samsung semiconductor
Image is representational - see mfr. specs

IRFR220

Samsung Semiconductor

Trans MOSFET N-CH 200V 4.6A 3-Pin(2+Tab) TO-252AA

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Технический паспорт АКСЕССУАРЫ Notify Me

Не соблюдается
Discontinued
Упаковка
Certificate of Compliance Guarantee
Описание +
Trans MOSFET N-CH 200V 4.6A 3-Pin(2+Tab) TO-252AA
Search Keywords: IRFR220
спецификация +
  • Product Attribute
    Attribute Value Select Attribute
  • поставщик:
    Samsung Semiconductor
  • Артикул / №:
    IRFR220
  • Единица измерения:
    Per Each
  • RoHS:
    No
  • ECCN:
    EAR99
  • Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    2500
  • Maximum Drain Source Resistance:
    800@10V mOhm
  • Maximum Continuous Drain Current:
    4.6 A
  • Dimension:
    6.73(Max) x 6.22(Max) x 2.39(Max) mm
  • Family:
    IRFR220
  • Channel Type:
    N
  • Channel Mode:
    Enhancement
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