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N-channel vertical DMOS FET – Enhancement mode - 600V - 20Ohm – Si – SOT 89 3 - 1.6 W – 1.6 mm x 4.6 mm x 2.6 mm - 52,800 mg

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N-channel vertical DMOS FET – Enhancement mode - 600V - 20Ohm – Si – SOT 89 3 - 1.6 W – 1.6 mm x 4.6 mm x 2.6 mm - 52,800 mg
Search Keywords: VN2460N8G
спецификация +
  • Product Attribute
    Attribute Value Select Attribute
  • поставщик:
    Microchip Technology
  • Артикул / №:
    VN2460N8-G
  • Единица измерения:
    Per Each
  • RoHS:
    Yes
  • HTS:
    8541290095
  • COO:
    PH
  • ECCN:
    EAR99
  • Reel Pack: This product ships on a reel. Depending on the quantity ordered, you may receive full factory reels, cut tape (components on a strip cut from a reel), or a combination of both.
    2000
  • Maximum Drain Source Resistance:
    20000@10V mOhm
  • Dimension:
    4.6(Max) x 2.6(Max) x 1.6(Max) mm
  • Material:
    Si
  • Maximum Continuous Drain Current:
    0.2 A
  • Configuration:
    Single Dual Drain
  • Category:
    Power MOSFET
  • Family:
    VN2460N8
  • Channel Mode:
    Enhancement
  • Channel Type:
    N
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Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
на складе: 5,300
Возможна немедленная отправка
Manufacturer Stock:
8 000 Можно отправить
Minimum Order Quantity:
500
6 Weeks Можно отправить 9/7/26
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PRICE (USD)
КОЛ-ВО
Unit Price
500
$1.12
2 000
$1.11
4 000
$1.10
6 000
$1.09
8 000
$1.08
10 000
$1.07
16 000
$1.06
26 000 +
$1.05
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