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Image is representational - see mfr. specs
MJD112-1G
onsemi
The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications.
Технический паспорт АКСЕССУАРЫ Notify Me
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Описание
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The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications.
Search Keywords: MJD1121G
спецификация
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Product AttributeAttribute Value Select Attribute
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поставщик:onsemi
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Артикул / №:MJD112-1G
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Единица измерения:Per Each
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RoHS:No
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HTS:8541290095
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COO:MY
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ECCN:EAR99
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Supplier Standard Pack:
75 -
Dimension:6.73(Max) x 2.38(Max) x 6.35(Max) mm
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Family:MJD112
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Maximum Collector Emitter Voltage:100 V
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Maximum Base Emitter Saturation Voltage:4@40mA@4A V
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Maximum Collector Base Voltage:100 V
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Maximum Collector Emitter Saturation Voltage:2@8mA@2A,3@40mA@4A V
Tools/3D Models
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НАБОР ИНСТРУМЕНТОВ ЭЭ
ресурсы
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Технический паспорт
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We’ll meet or beat any authorized competitor’s published price for this part.
на складе:
43,200
Ships today, if you order in
Minimum Order Quantity:
75
многократный:
75
29 Weeks
Можно отправить
24/11/26
PRICE (USD)
КОЛ-ВО
Unit Price
75
$0.3700
300
$0.3621
1 050
$0.3525
2 550
$0.3440
5 025
$0.3420
7 500
$0.3411
10 050
$0.3381
15 000 +
$0.3373
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