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N-channel vertical DMOS FET – Enhancement mode - 600V - 20Ohm – Si – SOT 89 3 - 1.6 W – 1.6 mm x 4.6 mm x 2.6 mm - 52,800 mg

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N-channel vertical DMOS FET – Enhancement mode - 600V - 20Ohm – Si – SOT 89 3 - 1.6 W – 1.6 mm x 4.6 mm x 2.6 mm - 52,800 mg
Search Keywords: VN2460N8G
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  • Product Attribute
    Attribute Value Select Attribute
  • 공급자:
    Microchip Technology
  • 부품 번호:
    VN2460N8-G
  • 측정 단위:
    Per Each
  • 유해물질 제한지침(RoHS):
    Yes
  • HTS:
    8541290095
  • COO:
    PH
  • ECCN:
    EAR99
  • Reel Pack: This product ships on a reel. Depending on the quantity ordered, you may receive full factory reels, cut tape (components on a strip cut from a reel), or a combination of both.
    2000
  • Maximum Drain Source Resistance:
    20000@10V mOhm
  • Dimension:
    4.6(Max) x 2.6(Max) x 1.6(Max) mm
  • Material:
    Si
  • Maximum Continuous Drain Current:
    0.2 A
  • Configuration:
    Single Dual Drain
  • Category:
    Power MOSFET
  • Family:
    VN2460N8
  • Channel Mode:
    Enhancement
  • Channel Type:
    N
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재고 보유: 5,300
Ships today, if you order in
공장 재고:
8,000 배송 가능
Minimum Order Quantity:
500
6 Weeks 배송 가능 7. 10. 26
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PRICE (USD)
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Unit Price
500
$1.12
2,000
$1.11
4,000
$1.10
6,000
$1.09
8,000
$1.08
10,000
$1.07
16,000
$1.06
26,000 +
$1.05
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