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MJD127T4G

onsemi

8.0 A, 100 V PNP Darlington Bipolar Power Transistor

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RoHS非遵守
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説明 +
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Search Keywords: MJD127T4G
仕様 +
  • Product Attribute
    Attribute Value Select Attribute
  • サプライヤー:
    onsemi
  • 部品番号:
    MJD127T4G
  • 測定単位:
    Per Each
  • RoHS:
    No
  • HTS:
    8541290095
  • COO:
    MY
  • ECCN:
    EAR99
  • サプライヤー標準パック: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    2500
  • Maximum Collector Emitter Voltage:
    100 V
  • Maximum Collector Base Voltage:
    100 V
  • Family:
    MJD127
  • Maximum Base Emitter Saturation Voltage:
    4.5@80mA@8A V
  • Dimension:
    6.73(Max) x 6.22(Max) x 2.38(Max) mm
  • Maximum Collector Emitter Saturation Voltage:
    2@16mA@4A,4@80mA@8A V
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We’ll meet or beat any authorized competitor’s published price for this part.
在庫: 4,000
即時出荷可能
発注済み:
2,500   出荷できます 9/16/26
Minimum Order Quantity:
100
29 Weeks 出荷できます 11/25/26
45ドルフラットレート配送:
カートに追加
PRICE (USD)
数量
Unit Price
100
$0.3025
500
$0.2777
1,000
$0.2770
2,500
$0.2632
5,000
$0.2566
7,500
$0.2559
10,000
$0.2553
15,000 +
$0.2502
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