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説明
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The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications.
Search Keywords: MJD1121G
仕様
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Product AttributeAttribute Value Select Attribute
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サプライヤー:onsemi
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部品番号:MJD112-1G
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測定単位:Per Each
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RoHS:No
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HTS:8541290095
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COO:MY
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ECCN:EAR99
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サプライヤー標準パック:
75 -
Dimension:6.73(Max) x 2.38(Max) x 6.35(Max) mm
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Family:MJD112
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Maximum Collector Emitter Voltage:100 V
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Maximum Base Emitter Saturation Voltage:4@40mA@4A V
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Maximum Collector Base Voltage:100 V
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Maximum Collector Emitter Saturation Voltage:2@8mA@2A,3@40mA@4A V
Tools/3D Models
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EE ツールボックス
リソース
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データシート
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在庫:
43,200
Ships today, if you order in
Minimum Order Quantity:
75
複数:
75
29 Weeks
出荷できます
12/22/26
45ドルフラットレート配送:
PRICE (USD)
数量
Unit Price
75
$0.3700
300
$0.3621
1,050
$0.3525
2,550
$0.3440
5,025
$0.3420
7,500
$0.3411
10,050
$0.3381
15,000 +
$0.3373
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