English
Chinese
Italiano
Portuguese
Deutschland
French
Russian
Japanese
Turkish
Korean
Spanish
Image is representational - see mfr. specs
MJD127T4G
onsemi
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Scheda dati ACCESSORI Notify Me
Non-Compliant
Certificate of Compliance Guarantee
Descrizione
+
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Search Keywords: MJD127T4G
Specifiche
+
-
Product AttributeAttribute Value Select Attribute
-
fornitore:onsemi
-
Codice componente:MJD127T4G
-
Unità di misura:per Each
-
RoHS :No
-
HTS:8541290095
-
COO:MY
-
ECCN:EAR99
-
Supplier Standard Pack:
2500 -
Maximum Collector Emitter Voltage:100 V
-
Maximum Collector Base Voltage:100 V
-
Family:MJD127
-
Maximum Base Emitter Saturation Voltage:4.5@80mA@8A V
-
Dimension:6.73(Max) x 6.22(Max) x 2.38(Max) mm
-
Maximum Collector Emitter Saturation Voltage:2@16mA@4A,4@80mA@8A V
Tools/3D Models
+
-
EE CASSETTA DEGLI ATTREZZI
risorse
+
Scheda dati
Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
in magazzino:
4.000
Spedizione oggi, if you order in
su ordine:
2.500
Può spedire 16/9/26
Minimum Order Quantity:
100
29 Weeks
Può spedire
2/12/26
PRICE (EUR)
QTÀ
Prezzo unitario
100
€0.2788
500
€0.2559
1.000
€0.2553
2.500
€0.2425
5.000
€0.2365
7.500
€0.2358
10.000
€0.2353
15.000 +
€0.2306
Click for Quote
Login
per sbloccare prezzi speciali
CUSTOMERS
ALSO BOUGHT
