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MJD112T4G by onsemi

MJD112T4G

onsemi

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

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Descrizione +
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
Search Keywords: MJD112T4G
Specifiche +
  • Product Attribute
    Attribute Value Select Attribute
  • fornitore:
    onsemi
  • Codice componente:
    MJD112T4G
  • Unità di misura:
    per Each
  • RoHS :
    No
  • HTS:
    8541290095
  • COO:
    MY
  • ECCN:
    EAR99
  • Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    2500
Tools/3D Models +
risorse +
Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
in magazzino: 6.040
Può essere spedito immediatamente
Minimum Order Quantity:
100
27 Weeks Può spedire 23/11/26
Aggiungi al carrello
PRICE (EUR)
QTÀ
Prezzo unitario
100
€0.2337
500
€0.2237
2.500
€0.2116
5.000
€0.2007
7.500
€0.1982
25.000
€0.1933
50.000 +
€0.1910
Confezione standard del fornitore
Click for Quote
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