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The OPS667 is a matched pair consisting of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor in a ...

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Description +
The OPS667 is a matched pair consisting of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor in a T-1 package.
Search Keywords: OPS667
spécification +
  • Product Attribute
    Attribute Value Select Attribute
  • fournisseur:
    Optek Technology/TT Electronics
  • Référence:
    OPS667
  • Unité de mesure:
    Per Each
  • RoHS:
    Yes
  • HTS:
    8541499500
  • COO:
    MX
  • ECCN:
    EAR99
  • Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    1000
  • Half Intensity Angle Degrees:
    N/A
  • Fabrication Technology:
    NPN Transistor10335
  • Family:
    OPS667
  • Lens Shape Type:
    Domed10340
  • Dimension:
    5.0810334mm(Max) + 0.76 x 4.19(Max)mm
  • Cut-Off Filter:
    N/A
  • Material:
    Silicon10341
  • Lens Dimensions:
    3.18 mm
  • Lens Color:
    N/A
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We’ll meet or beat any authorized competitor’s published price for this part.
en stock: 0
Quantité minimale de commande pour qté en rupture de stock:
1000
multiple:
1000
22 Weeks Peut expédier 6/10/26
Commande différée
PRICE (EUR)
QTÉ
Prix unitaire
1 000
€3.15
2 000
€1.94
4 000
€1.53
8 000 +
€1.51
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