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Image is representational - see mfr. specs
MJD127T4G
onsemi
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
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Description
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8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Search Keywords: MJD127T4G
spécification
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Product AttributeAttribute Value Select Attribute
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fournisseur:onsemi
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Référence:MJD127T4G
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Unité de mesure:Per Each
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RoHS:No
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HTS:8541290095
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COO:MY
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ECCN:EAR99
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Référence:
2500 -
Maximum Collector Emitter Voltage:100 V
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Maximum Collector Base Voltage:100 V
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Family:MJD127
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Maximum Base Emitter Saturation Voltage:4.5@80mA@8A V
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Dimension:6.73(Max) x 6.22(Max) x 2.38(Max) mm
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Maximum Collector Emitter Saturation Voltage:2@16mA@4A,4@80mA@8A V
Tools/3D Models
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BOÎTE À OUTILS EE
ressources
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Fiche technique
Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
en stock:
4,000
Peut être expédié immédiatement
sur commande:
2 500
Peut expédier 16/9/26
Commande min Quantitè:
100
29 Weeks
Peut expédier
14/12/26
PRICE (EUR)
QTÉ
Prix unitaire
100
€0.2814
500
€0.2583
1 000
€0.2577
2 500
€0.2449
5 000
€0.2387
7 500
€0.2381
10 000
€0.2375
15 000 +
€0.2328
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