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MJD112T4G by onsemi

MJD112T4G

onsemi

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

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Non-Compliant
Emballage
Certificate of Compliance Guarantee
Description +
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
Search Keywords: MJD112T4G
spécification +
  • Product Attribute
    Attribute Value Select Attribute
  • fournisseur:
    onsemi
  • Référence:
    MJD112T4G
  • Unité de mesure:
    Per Each
  • RoHS:
    No
  • HTS:
    8541290095
  • COO:
    MY
  • ECCN:
    EAR99
  • Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    2500
Tools/3D Models +
ressources +
Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
en stock: 6,040
Peut être expédié immédiatement
Commande min Quantitè:
100
27 Weeks Peut expédier 30/11/26
Ajouter au panier
PRICE (EUR)
QTÉ
Prix unitaire
100
€0.2340
500
€0.2239
2 500
€0.2118
5 000
€0.2009
7 500
€0.1984
25 000
€0.1935
50 000 +
€0.1912
Emballage standard du fournisseur
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