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2N7000
onsemi
N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω
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Description
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N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω
Search Keywords: 2N7000
spécification
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Product AttributeAttribute Value Select Attribute
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fournisseur:onsemi
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Référence:2N7000
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Unité de mesure:Per Each
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RoHS:Yes
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HTS:8541210095
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COO:KR
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ECCN:EAR99
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Référence:
10000 -
Channel Type:N
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Maximum Continuous Drain Current:0.2 A
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Dimension:5.2(Max) x 4.19(Max) x 5.33(Max) mm
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Family:2N7000
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Channel Mode:Enhancement
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Maximum Drain Source Resistance:5000@10V mOhm
ressources
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Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
en stock:
26,400
Expédition aujourd'hui, if you order in
Commande min Quantitè:
250
18 Weeks
Peut expédier
2/10/26
PRICE (EUR)
QTÉ
Prix unitaire
250
€0.1206
1 000
€0.1155
2 500
€0.1108
5 000
€0.1092
10 000
€0.1036
30 000
€0.0998
50 000
€0.0995
100 000 +
€0.0985
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