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Image is representational - see mfr. specs
MJD112-1G
onsemi
The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications.
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Description
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The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications.
Search Keywords: MJD1121G
spécification
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Product AttributeAttribute Value Select Attribute
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fournisseur:onsemi
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Référence:MJD112-1G
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Unité de mesure:Per Each
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RoHS:No
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HTS:8541290095
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COO:MY
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ECCN:EAR99
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Référence:
75 -
Dimension:6.73(Max) x 2.38(Max) x 6.35(Max) mm
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Family:MJD112
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Maximum Collector Emitter Voltage:100 V
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Maximum Base Emitter Saturation Voltage:4@40mA@4A V
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Maximum Collector Base Voltage:100 V
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Maximum Collector Emitter Saturation Voltage:2@8mA@2A,3@40mA@4A V
Tools/3D Models
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Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
en stock:
43,200
Peut être expédié immédiatement
Commande min Quantitè:
75
multiple:
75
29 Weeks
Peut expédier
21/12/26
PRICE (EUR)
QTÉ
Prix unitaire
75
€0.3429
300
€0.3356
1 050
€0.3267
2 550
€0.3188
5 025
€0.3170
7 500
€0.3161
10 050
€0.3134
15 000 +
€0.3126
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