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Image is representational - see mfr. specs
APTGT50DDA120T3G
Microchip Technology
Trans IGBT Module N-CH 1200V 75A 270000mW 32-Pin Case SP-3 Tube
Fiche technique ACCESSOIRES Notify Me
RoHS Compliant
TUBE Emballage
Description
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Trans IGBT Module N-CH 1200V 75A 270000mW 32-Pin Case SP-3 Tube
Search Keywords: APTGT50DDA120T3G
spécification
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Product AttributeAttribute Value Select Attribute
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fournisseur:Microchip Technology
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Référence:APTGT50DDA120T3G
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Unité de mesure:Per Each
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RoHS:Yes
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HTS:8541590080
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ECCN:EAR99
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Référence:
1 -
Family:APTGT50DDA120T3G
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Maximum Power Dissipation:270000 mW
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Dimension:73.4 x 40.8 x 11.56996mmmm
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Maximum Continuous Collector Current:75 A
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Maximum Gate Emitter Voltage:±20 V
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Configuration:Dual6995
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Channel Type:N6994
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Maximum Collector-Emitter Voltage:1200 V
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Maximum Gate Emitter Leakage Current:0.4 uA
Tools/3D Models
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BOÎTE À OUTILS EE
ressources
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Fiche technique
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en stock: 0
Quantité minimale de commande pour qté en rupture de stock:
4
26 Weeks
Peut expédier
23/11/26
PRICE (EUR)
QTÉ
Prix unitaire
4
€85.72
8
€64.29
12
€60.00
16 +
€58.80
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