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PRODUCT INFO
NDT3055L by FAIRCHILD
Image is representational - see manufacturer’s specifications
FAIRCHILD

NDT3055L

Fairchild

Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R

PRICING per each  AVAILABILITY real time   
1-24 :$0.90
25-99 :$0.82
100-499 :$0.75
500-999 :$0.69
1,000-2,499 :$0.64
2,500-3,999 :$0.60
4,000 + :$0.56
6 can ship Monday
In our stock 
Ships From: Phoenix, AZ
RESOURCES
SPECS
Supplier: Fairchild
Part No: NDT3055L
RoHS: Yes
Maximum Drain Source Resistance: 100@10V mOhm
Maximum Gate Source Voltage: ±20 V
Family: NDT3055L
Maximum Drain Source Voltage: 60 V
Channel Type: N
Channel Mode: Enhancement
Supplier_Package: SOT-223
Packaging: Tape and Reel
Pin_Count: 4
Mounting: Surface Mount
Maximum Continuous Drain Current: 4 A
Operating Temperature: -65 to 150 °C
Dimension: 6.7(Max) x 3.7(Max) x 1.7(Max)mm
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DESCRIPTION
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Product Highlights
  • 4 A, 60 V. RDS(ON) = 0.100 W @ VGS = 10 V, RDS(ON) = 0.120 W @ VGS = 4.5 V.
  • Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.
PART CLASSIFICATION DATA
HTS: 8541210095
ECCN: EAR99
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