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Diodes, Transistors & Thyristors
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Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R
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Maximum Drain Source Resistance:
Maximum Gate Source Voltage:
Maximum Drain Source Voltage:
Tape and Reel
Maximum Continuous Drain Current:
-65 to 150 °C
6.7(Max) x 3.7(Max) x 1.7(Max)mm
Customers Who Bought NDT3055 Also Bought
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
4 A, 60 V. R
= 10 V.
High density cell design for extremely low R
High power and current handling capability in a widely used surface mount package.
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