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PRODUCT INFO
HGT1S12N60A4DS by FAIRCHILD
Image is representational - see manufacturer’s specifications
FAIRCHILD

HGT1S12N60A4DS

Fairchild

Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail

PRICING per each  AVAILABILITY real time   
1-399 :$2.46
400 + :$2.34
158 can ship Monday
In our stock 
Ships From: Phoenix, AZ
RESOURCES
SPECS
Supplier: Fairchild
Part No: HGT1S12N60A4DS
RoHS: Yes
Maximum Collector Emitter Voltage: 600 V
Family: HGT1S12N60A4DS
Maximum Continuous Collector Current: 54 A
Channel Type: N
Supplier_Package: TO-263AB
Packaging: Rail
Configuration: Single
Pin_Count: 3
Mounting: Surface Mount
Maximum Gate Emitter Voltage: ±20 V
Dimension: 10.67(Max) x 9.65(Max) x 4.83(Max) mm
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DESCRIPTION

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 o C and 150 o C. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49337.



Product Highlights
  • >100kHz Operation............390V, 12A
  • 200kHz Operation............390V, 9A
  • 600V Switching SOA Capability
  • Typical Fall Time............70ns at TJ = 125°C
  • Low Conduction Loss
  • Temperature Compensating SABER™ Model www.fairchildsemi.com
  • Related Literature
    • TB334 ?Guidelines for Soldering Surface Mount Components to PC Boards"
COMMUNITY FORUM
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PART CLASSIFICATION DATA
HTS: 8541290095
ECCN: EAR99
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