FQPF33N10 FAIRCHILD | MOSFET
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PRODUCT INFO
FQPF33N10 by FAIRCHILD
Image is representational - see manufacturer’s specifications
FAIRCHILD

FQPF33N10

Fairchild

Trans MOSFET N-CH 100V 18A 3-Pin(3+Tab) TO-220F Tube

PRICING per each  AVAILABILITY Updated Today   
1-9 :$1.19
10-99 :$0.92
100-499 :$0.73
500-999 :$0.65
1,000 + :$0.51
20 can ship Monday
In our stock This is the quantity we have on-hand in our inventory for immediate shipment.
Ships From: Santa Monica, CA
RESOURCES
SPECS
Supplier: Fairchild
Part No: FQPF33N10
RoHS: Yes
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. <b>Minimum Order Quantities</b> and <b>Required Order Multiples</b> are presented with our price and availability information. 1,000
Maximum Drain Source Resistance: 52@10V mOhm
Maximum Gate Source Voltage: ±25 V
Family: FQPF33N10
Maximum Drain Source Voltage: 100 V
Channel Type: N
Channel Mode: Enhancement
Supplier_Package: TO-220F
Packaging: Tube
Pin_Count: 3
Mounting: Through Hole
Maximum Continuous Drain Current: 18 A
Operating Temperature: -55 to 175 °C
Dimension: 10.16 x 4.7 x 15.87 mm
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DESCRIPTION

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Product Highlights

  • 18A, 100V, RDS(on) = 0.052W @VGS = 10 V
  • Low gate charge ( typical 38 nC)
  • Low Crss ( typical 62 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°Cmaximum junction temperature rating
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PART CLASSIFICATION DATA
HTS: 8541290095
ECCN: EAR99