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Diodes, Transistors & Thyristors
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Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB Rail
Discontinued & Replaced
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1,000 + :
850 can ship Monday
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Maximum Drain Source Resistance:
Maximum Gate Source Voltage:
Maximum Drain Source Voltage:
Maximum Continuous Drain Current:
-55 to 150 °C
10.1(Max) x 4.7(Max) x 9.4(Max)mm
Customers Who Bought FQP3N50C Also Bought
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
3 A, 500 V, R
= 10 V
Low gate charge (typical 10 nC )
Low Crss (typical 8.5 pF)
100 % avalanche tested
Improved dv/dt capability
PART CLASSIFICATION DATA
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