surfy
Contact Us:   Live Chat chat live or (888) 906-8217Track My Order

Onlinecomponents.com

Secure CheckoutSecure Checkout
DidYouKnow blueChatONLINE LIVE CHAT
or call us: (888)906-8217
Visit us at Electronica 2014 / Learn how to win a trip to Las Vegas
contact: Live Chatchat live or (888) 906-8217
Search
Browse by DropdownList Arrow image Cart Imageitem(s)
PRODUCT INFO
FQD2N60CTF by FAIRCHILD
Image is representational - see manufacturer’s specifications
FAIRCHILD

FQD2N60CTF

Fairchild

Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R

PRICING per each  AVAILABILITY real time   
1 + :$0.221
Request Quote
1,030 can ship today
In our stock 
Ships From: Phoenix, AZ
In Stock quantities placed in the next
4 hour(s) 49 minute(s) ship today!
RESOURCES
SPECS
Supplier: Fairchild
Part No: FQD2N60CTF
RoHS: Yes
Maximum Drain Source Resistance: 4700@10V mOhm
Maximum Gate Source Voltage: ±30 V
Family: FQD2N60C
Maximum Drain Source Voltage: 600 V
Channel Type: N
Channel Mode: Enhancement
Supplier_Package: DPAK
Packaging: Tape and Reel
Pin_Count: 3
Mounting: Surface Mount
Maximum Continuous Drain Current: 1.9 A
Operating Temperature: -55 to 150 °C
Dimension: 6.6 x 6.1 x 2.3mm
Customers Who Bought FQD2N60CTF Also Bought
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.



Product Highlights
  • 1.9A, 600V, RDS(on) = 4.7W @VGS = 10 V
  • Low gate charge (typical 8.5 nC)
  • Low Crss (typical 4.3 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
PART CLASSIFICATION DATA
HTS: 8541290095
ECCN: EAR99
DID YOU KNOW?