FQD2N60CTF FAIRCHILD | MOSFET
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PRODUCT INFO
FQD2N60CTF by FAIRCHILD
Image is representational - see manufacturer’s specifications
FAIRCHILD

FQD2N60CTF

Fairchild

Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R

PRICING per each  AVAILABILITY Updated Today   
1 + :$0.221
1030 Ships 10/23/2017
In our stock This is the quantity we have on-hand in our inventory for immediate shipment.
Ships From: Phoenix, AZ
In Stock quantities placed in the next
5 hour(s) 10 minute(s) ship today!
RESOURCES
SPECS
Supplier: Fairchild
Part No: FQD2N60CTF
RoHS: Yes
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. <b>Minimum Order Quantities</b> and <b>Required Order Multiples</b> are presented with our price and availability information. 2,000
Maximum Drain Source Resistance: 4700@10V mOhm
Maximum Gate Source Voltage: ±30 V
Family: FQD2N60C
Maximum Drain Source Voltage: 600 V
Channel Type: N
Channel Mode: Enhancement
Supplier_Package: DPAK
Packaging: Tape and Reel
Pin_Count: 3
Mounting: Surface Mount
Maximum Continuous Drain Current: 1.9 A
Operating Temperature: -55 to 150 °C
Dimension: 6.6 x 6.1 x 2.3 mm
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DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.



Product Highlights
  • 1.9A, 600V, RDS(on) = 4.7W @VGS = 10 V
  • Low gate charge (typical 8.5 nC)
  • Low Crss (typical 4.3 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
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PART CLASSIFICATION DATA
HTS: 8541290095
ECCN: EAR99