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PRODUCT INFO
FDV304P by FAIRCHILD
Image is representational - see manufacturer’s specifications
FAIRCHILD

FDV304P

Fairchild

Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R

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1 + :$0.244
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Ships From: Phoenix, AZ
RESOURCES
SPECS
Supplier: Fairchild
Part No: FDV304P
RoHS: Yes
Maximum Drain Source Resistance: 1100@4.5V mOhm
Maximum Gate Source Voltage: 8 V
Family: FDV304P
Maximum Drain Source Voltage: 25 V
Channel Type: P
Channel Mode: Enhancement
Supplier_Package: SOT-23
Packaging: Tape and Reel
Pin_Count: 3
Mounting: Surface Mount
Maximum Continuous Drain Current: 0.46 A
Operating Temperature: -55 to 150 °C
Dimension: 2.92 x 1.3 x 0.93 mm
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DESCRIPTION
This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Product Highlights
  • -25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 W @ VGS = -4.5 V, RDS(ON) = 1.5 W @ VGS= -2.7 V.
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
  • Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
  • Compact industry standard SOT-23 surface mount package.
COMMUNITY FORUM
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PART CLASSIFICATION DATA
HTS: 8541210095
ECCN: EAR99
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