- Home ›
- Alle producten›
- Discrete halfgeleiders ›
- Transistoren ›
- Darlington ›
- MJD112-1G
onsemi
MJD112-1G
The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications.
Bekijk gegevensblad Stel een vraag aan het gegevensblad Accessoires Meld mij
| Productkenmerk | Attribuutwaarde Selecteer kenmerk |
|---|---|
| Leverancier: | onsemi |
| Onderdeelnr.: | MJD112-1G |
| Meeteenheid: | Per Stuk |
| RoHS: | Nee |
| HTS: | 8541290095 |
| COO: | MY |
| ECCN: | EAR99 |
Standaardverpakking van de leverancier:
|
75 |
| Dimension: | 6.73(Max) x 2.38(Max) x 6.35(Max) mm |
| Family: | MJD112 |
| Maximum Collector Emitter Voltage: | 100 V |
| Maximum Base Emitter Saturation Voltage: | 4@40mA@4A V |
| Maximum Collector Base Voltage: | 100 V |
| Maximum Collector Emitter Saturation Voltage: | 2@8mA@2A,3@40mA@4A V |