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onsemi
MJD112-1G
The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications.
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| Product Attribute | Attribute Value Select Attribute |
|---|---|
| Supplier: | onsemi |
| Part No: | MJD112-1G |
| Unit of Measure: | Per Each |
| RoHS: | No |
| HTS: | 8541290095 |
| COO: | MY |
| ECCN: | EAR99 |
Supplier's Standard Package:
|
75 |
| Dimension: | 6.73(Max) x 2.38(Max) x 6.35(Max) mm |
| Family: | MJD112 |
| Maximum Collector Emitter Voltage: | 100 V |
| Maximum Base Emitter Saturation Voltage: | 4@40mA@4A V |
| Maximum Collector Base Voltage: | 100 V |
| Maximum Collector Emitter Saturation Voltage: | 2@8mA@2A,3@40mA@4A V |