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- MJD112-1G
Description
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The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications.
Search Keywords: MJD1121G
SPECS
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Product AttributeAttribute Value Select Attribute
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Supplier:onsemi
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Part No:MJD112-1G
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Unit of Measure:Per Each
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RoHS:No
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HTS:8541290095
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COO:MY
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ECCN:EAR99
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Supplier Standard Pack:
75 -
Dimension:6.73(Max) x 2.38(Max) x 6.35(Max) mm
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Family:MJD112
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Maximum Collector Emitter Voltage:100 V
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Maximum Base Emitter Saturation Voltage:4@40mA@4A V
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Maximum Collector Base Voltage:100 V
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Maximum Collector Emitter Saturation Voltage:2@8mA@2A,3@40mA@4A V
Product Guides
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Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
In Stock:
43,200
Ships today, if you order in
Minimum Order Quantity:
75
Order Increment:
75
29 Weeks
can ship
12/2/26
Price (USD)
Qty
Unit Price
75
$0.3700
300
$0.3621
1,050
$0.3525
2,550
$0.3440
5,025
$0.3420
7,500
$0.3411
10,050
$0.3381
15,000 +
$0.3373
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