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MJD112-1G by onsemi
Image is representational - see mfr. specs

MJD112-1G

onsemi

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

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RoHS非遵守
TUBE 包装
Certificate of Compliance Guarantee
説明 +
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
Search Keywords: MJD1121G
仕様 +
  • Product Attribute
    Attribute Value Select Attribute
  • サプライヤー:
    onsemi
  • 部品番号:
    MJD112-1G
  • 測定単位:
    Per Each
  • RoHS:
    No
  • HTS:
    8541290095
  • COO:
    MY
  • ECCN:
    EAR99
  • サプライヤー標準パック This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    75
  • Dimension:
    6.73(Max) x 2.38(Max) x 6.35(Max) mm
  • Family:
    MJD112
  • Maximum Collector Emitter Voltage:
    100 V
  • Maximum Base Emitter Saturation Voltage:
    4@40mA@4A V
  • Maximum Collector Base Voltage:
    100 V
  • Maximum Collector Emitter Saturation Voltage:
    2@8mA@2A,3@40mA@4A V
Tools/3D Models +
リソース +
Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
在庫: 43,200
即時出荷可能
最小注文:
75
複数:
75
12 Weeks 出荷できます 2/16/26
カートに追加
PRICE (USD)
数量
Unit Price
75
$0.6690
300
$0.5790
1,050
$0.4576
2,550
$0.4352
5,025
$0.3943
7,500
$0.3923
10,050
$0.3770
15,000 +
$0.3751
Suppliers Standard Package
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