GeneSiC has launched 3300V and 1700V 1000mΩ SiC MOSFETs that “enhance and simplify power systems across energy storage, renewable energy, industrial motors, general-purpose inverters and industrial lighting,” Electronics Weekly reported.

GeneSiC Semiconductor stated they have immediate availability of G2R1000MT17J, G2R1000MT17D, and G2R1000MT33J - available in 1000mΩ and 450mΩ options as SMD and Through-Hole discrete packages.

Products released are: 

• G2R1000MT33J – 3300V 1000mΩ TO-263-7 G2R™ SiC MOSFET 

• G2R1000MT17D – 1700V 1000mΩ TO-247-3 G2R™ SiC MOSFET 

• G2R1000MT17J – 1700V 1000mΩ TO-263-7 G2R™ SiC MOSFET 

• G3R450MT17J – 1700V 450mΩ TO-263-7 G3R™ SiC MOSFET 

• G3R450MT17D– 1700V 450mΩ TO-247-3 G3R™ SiC MOSFET.

GeneSiC’s 3300V and 1700V SiC MOSFETs are optimised for power system designs requiring elevated efficiency levels and ultra-fast switching speeds.