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MJD127T4G
onsemi
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Datenblatt Zubehör Notify Me
Nicht RoHS-konform
Certificate of Compliance Guarantee
Beschreibung
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8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Search Keywords: MJD127T4G
Spezifizierung
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Product AttributeAttribute Value Select Attribute
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Lieferant:onsemi
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Artikelnummer:MJD127T4G
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Maßeinheit:Per Each
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RoHS (Beschränkung gefährlicher Stoffe):No
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HTS:8541290095
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COO:MY
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ECCN:EAR99
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Standardmenge:
2500 -
Maximum Collector Emitter Voltage:100 V
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Maximum Collector Base Voltage:100 V
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Family:MJD127
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Maximum Base Emitter Saturation Voltage:4.5@80mA@8A V
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Dimension:6.73(Max) x 6.22(Max) x 2.38(Max) mm
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Maximum Collector Emitter Saturation Voltage:2@16mA@4A,4@80mA@8A V
Ressourcen
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Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
Vorrätig:
4,000
Versand heute, if you order in
Bestellt:
2 500
Kan verzenden 16/9/26
Minimum Order Quantity:
100
29 Weeks
Kan verzenden
26/11/26
PRICE (EUR)
MENGE
Stückpreis
100
€0.2780
500
€0.2552
1 000
€0.2546
2 500
€0.2419
5 000
€0.2358
7 500
€0.2352
10 000
€0.2346
15 000 +
€0.2299
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