Hirose first appeared on the international stage in 1968 and has crafted a network of sales offices, agents and production facilities around the world. The company continues to broaden the scope of its business activities, keeping pace with market advances and satisfying the changing connector needs of companies around the globe. Hirose's vigorous international strategy rests on three pillars:
IGBT Transistor - Trench Field Stop - 1200 V - 245 A - 2.1V Vce(on) (Max) @ 15V Vge, 100A Ic - 960W - 540nC Gate ...
IGBT Transistor - PT Type - 1200 V - 69 A - 3.9V Vce(on) (Max) @ 15V Vge, 25A Ic - 417W - 110 nC Gate Charge - TO ...
IGBT Module - NPT - Single Configuration - 1200 V - 123 A - 570 W - 3.7V Vce(on) (Max) @ 15V Vge, 100A Ic - ISOTO ...
IGBT Transistor - NPT Type - 1200 V - 50 A - 3.7V Vce(on) (Max) @ 15V Vge, 50A Ic - 625 W - 340 nC Gate Charge - ...
Trans IGBT Module N-CH 1200V 280A 890000mW 7-Pin Case SP-6 Tube
Trans IGBT Module N-CH 1200V 170A 830000mW
Trans IGBT Module N-CH 1200V 149A 625000mW
Trans IGBT Module N-CH 1200V