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MJD112T4G by onsemi

MJD112T4G

onsemi

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

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Embalagem
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Descrição +
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
Search Keywords: MJD112T4G
especificação +
  • Product Attribute
    Attribute Value Select Attribute
  • fornecedor:
    onsemi
  • Número do item:
    MJD112T4G
  • Unidade de medida:
    Per Each
  • RoHS:
    No
  • HTS:
    8541290095
  • COO:
    MY
  • ECCN:
    EAR99
  • Supplier Standard Pack:: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
    2500
Tools/3D Models +
recursos +
Price Match Guarantee
We’ll meet or beat any authorized competitor’s published price for this part.
em estoque: 6,040
Pode ser enviado imediatamente
Minimum Order Quantity:
100
27 Weeks Pode enviar 23/11/26
Adicionar ao carrinho
PRICE (USD)
QTD
Unit Price
100
$0.2515
500
$0.2407
2 500
$0.2277
5 000
$0.2160
7 500
$0.2133
25 000
$0.2080
50 000 +
$0.2055
Suppliers Standard Package
Click for Quote
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