FAIRCHILD FDV301N is in stock | Buy FDV301N | FDV301N
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Part No:
FDV301N
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N-Channel,Digital FET
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Package Type:
TAPE REEL
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| 1-24 : | $0.069 | | 25-99 : | $0.058 | | 100-249 : | $0.049 | | 250-499 : | $0.039 | | 500-999 : | $0.035 | | 1000-2999 : | $0.032 | | 3000-5999 : | $0.028 | | 6000 + : | $0.027 |
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In Stock:
6,000 pcs. can ship now.
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Specifications for
FDV301N
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Resource Center
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Description for FDV301N
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Manufacturer:
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Fairchild
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Part No:
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FDV301N
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RoHS:
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Yes
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Manufacturer
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Fairchild
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Part No:
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FDV301N
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RoHS:
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Yes
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Maximum Drain Source Resistance:
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4000@4.5V
mOhm
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Maximum Gate Source Voltage:
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8
V
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Family:
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FDV301N
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Maximum Drain Source Voltage:
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25
V
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Channel Type:
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N
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Channel Mode:
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Enhancement
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Supplier_Package:
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SOT-23
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Packaging:
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Tape and Reel
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Pin_Count:
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3
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Mounting:
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Surface Mount
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Maximum Continuous Drain Current:
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0.5
A
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Operating Temperature:
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-55 to 150
°C
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Dimension:
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2.92 x 1.3 x 0.93mm
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This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.
Product Highlights:
- 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 W @ VGS= 2.7 V, RDS(ON) = 4 W @ VGS= 4.5 V.
- Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
- Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
- Replace multiple NPN digital transistors with one DMOS FET.
This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.
Product Highlights:
- 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 W @ VGS= 2.7 V, RDS(ON) = 4 W @ VGS= 4.5 V.
- Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
- Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
- Replace multiple NPN digital transistors with one DMOS FET.
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Fairchild FDV301N Alternative Names
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