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Trans MOSFET N-CH 600V 6.26A 3-Pin(3+Tab) TO-220F Tube
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Maximum Drain Source Resistance:
Maximum Gate Source Voltage:
Maximum Drain Source Voltage:
Maximum Continuous Drain Current:
-55 to 150 °C
10.16 x 4.7 x 15.87mm
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
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