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Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Discontinued & Replaced
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Maximum Drain Source Resistance:
Maximum Gate Source Voltage:
Maximum Drain Source Voltage:
Tape and Reel
Maximum Continuous Drain Current:
-55 to 150 °C
6.6 x 6.1 x 2.3mm
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
1.9A, 600V, R
= 10 V
Low gate charge (typical 8.5 nC)
Low Crss (typical 4.3 pF)
100% avalanche tested
Improved dv/dt capability
PART CLASSIFICATION DATA
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